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| AP6924GEY Pb Free Plating Product Advanced Power Electronics Corp. Low On-Resistance Fast Switching Characteristic Included Schottky Diode SOT-26 GA D K S N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) A 20V 600m 1A ID Description D A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID@TA=25 ID@TA=70 IDM IF IFM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) Continuous Drain Current (MOSFET) Pulsed Drain Current (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range 1 1 3 Rating 20 20 6 1 0.8 8 0.5 2 0.9 0.9 -55 to 125 -55 to 125 Units V V V A A A A A W W Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 (MOSFET) Thermal Resistance Junction-ambient (Schottky) 3 Value Max. Max. 110 110 Units /W /W Data and specifications subject to change without notice 200301051 AP6924GEY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max. Units 600 850 1.2 1 10 10 2 60 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance VGS=4.5V, ID=1A VGS=2.5V, ID=0.5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=600mA VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=6V ID=600mA VDS=16V VGS=4.5V VDS=10V ID=600mA RG=3.3,VGS=5V RD=16.7 VGS=0V VDS=10V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=750mA, VGS=0V Min. - Typ. - Max. 1.2 Unit V Schottky Characteristics@Tj=25 Symbol VF Irm CT Parameter Forward Voltage Drop Maximum Reverse Leakage Current Test Conditions IF=500mA Vr=20V Vr=10V Min. - Typ. 21 Max. Units 0.5 100 V uA pF Junction Capacitance Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180/W when mounted on min. copper pad. AP6924GEY MOSFET 2.5 2.5 T A =25 C 2.0 o 5.0V 4.5V 3.5V ID , Drain Current (A) T A =125 C 2.0 o 5.0V 4.5V 3.5V ID , Drain Current (A) 1.5 1.5 2.5V 1.0 2.5V 1.0 0.5 V G =2.0V 0.5 V G =2.0V 0.0 0 0.5 1 1.5 2 2.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1250 1.9 1050 I D = 0.5A T A =25 o C Normalized RDS(ON) 1.6 I D =1A V G =4.5V RDS(ON) (m) 850 1.3 650 1.0 450 0.7 250 1 2 3 4 5 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.0 0.8 0.6 T j =125 o C T j =25 o C Normalized VGS(th) (V) 1.5 IS(A) 1.0 0.4 0.5 0.2 0.0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP6924GEY f=1.0MHz 12 100 I D =0.6A VGS , Gate to Source Voltage (V) V DS =10V V DS =12V V DS =16V C (pF) C iss 8 4 C oss C rss 0 0 0.5 1 1.5 2 2.5 3 10 1 3 5 7 9 11 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 100us Normalized Thermal Response (Rthja) 1ms 1 Duty factor=0.5 0.2 0.1 0.1 ID (A) 10ms 0.05 0.02 0.01 100ms 0.1 PDM 0.01 Single Pulse t T Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=180 oC/W T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance SCHOTTKY DIODE 10 1 IR , Reverse Current (mA) 20V 0.1 IF , Forward Current (A) 1 16V T j = 1 25 o C T j = 25 o C 0.01 0.001 25 50 75 100 125 0.1 0 0.2 0.4 0.6 0.8 T j , Junction Temperature ( C) o V F , Forward Voltage Drop (V) Fig 1. Reverse Leakage Current v.s. Junction Temperature Fig 2. Forward Voltage Drop |
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